Plasma processing system control based on RF voltage
US8501631B2 · kind B2 · utility
29Cited by
16References
20Claims
0Family size
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Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05B2219/45031
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for controlling a plasma processing system using wafer bias information derived from RF voltage information is proposed. The RF voltage is processed via an analog or digital methodology to obtain peak voltage information at least for each of the fundamental frequencies and the broadband frequency. The peak voltage information is then employed to derive the wafer bias information to serve as a feedback or control signal to hardware/software of the plasma processing system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.