Multi-exposure lithography employing a single anti-reflective coating layer
US8507187B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 9, 2008 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Jun 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.