Semiconductor device and method of manufacturing the same

US8507991B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Wenwu Wang · Beijing, CN
• Kai Han · Zhubeikou, TW
• Shijie Chen · Shanghai, CN
• Xiaolei Wang · Beijing, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Jun 14, 2012
• Grant date: Aug 13, 2013
• Expiry date: Jun 14, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/926

Abstract

A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.