Halosilane assisted PVT growth of SiC
US8512471B2 · kind B2 · utility
7Cited by
10References
35Claims
0Family size
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Key dates
| Filing date | May 15, 2012 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.