Patent · US Active

Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron

US8512526B2 · kind B2 · utility

2Cited by

82References

13Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Karl M. Brown · Mountain View, US
John Pipitone · Livermore, US
Vineet Haresh Mehta · Boston, US

Key dates

Filing date	Sep 7, 2005
Grant date	Aug 20, 2013
Priority date	—
Expiry date	May 15, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76844
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.