Highly selective doped oxide etchant
US8512587B2 · kind B2 · utility
1Cited by
18References
36Claims
0Family size
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Key dates
| Filing date | Jul 30, 2007 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Nov 10, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally, with an inorganic acid, and a pH of 1 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.