Patent · US Active

Lithographic dry development using optical absorption

US8512937B2 · kind B2 · utility

0Cited by

2References

16Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Deirdre Olynick · Corona, US
P. James Schuck · Oakland, US
Martin Schmidt · Brookline, US

Key dates

Filing date	Mar 2, 2011
Grant date	Aug 20, 2013
Priority date	—
Expiry date	Mar 2, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/203
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.