Plating apparatus for metallization on semiconductor workpiece
US8518224B2 · kind B2 · utility
3Cited by
6References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2007 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Apr 26, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.