Methods of forming and utilizing rutile-type titanium oxide
US8518486B2 · kind B2 · utility
7Cited by
12References
12Claims
0Family size
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Key dates
| Filing date | May 12, 2010 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.