Cleaning process for semiconductor device fabrication
US8518634B2 · kind B2 · utility
5Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Aug 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.