Patent · US Active

Method of providing a semiconductor structure with forming a sacrificial structure

US8518732B2 · kind B2 · utility

1Cited by

7References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Stefan Kolb · Unterschleißheim, DE
Boris Binder · Dresden, DE
Bernd Foeste · Dresden, DE
Marco Mueller · Villach, AT

Key dates

Filing date	Dec 22, 2010
Grant date	Aug 27, 2013
Priority date	—
Expiry date	Jan 26, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D48/50
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.