Integration of eNVM, RMG, and HKMG modules
US8518775B2 · kind B2 · utility
9Cited by
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18Claims
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Key dates
| Filing date | Oct 3, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Oct 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device is fabricated through the integration of embedded non-volatile memory (eNVM) with replacement metal gate (RMG) and high-k/metal gate (HKMG) modules. Embodiments include forming two substrate portions having upper surfaces at different heights, forming non-volatile gate stacks over the substrate portion with the lower upper surface, and forming high-voltage gate stacks and logic gate stacks over the other substrate portion. Embodiments include the upper surfaces of the non-voltage gate stacks, the high-voltage gate stacks, and the logic gate stacks being substantially coplanar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.