Process of making semiconductor on glass substrates with a stiffening layer
US8518799B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Dec 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.