Patent · US Active

Methods for forming contacts in semiconductor devices

US8518820B2 · kind B2 · utility

0Cited by

9References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roberto Schiwon · Dresden, DE
Klaus Herold · Poughquag, US
Jenny Lian · Oshima, JP
Sajan Marokkey · Wappingers Falls, US
Martin Ostermayr · Straubing, DE

Key dates

Filing date	Nov 21, 2011
Grant date	Aug 27, 2013
Priority date	—
Expiry date	Feb 27, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10B10/18
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Mask sets, layout design, and methods for forming contacts in devices are described. In one embodiment, a semiconductor device includes a plurality of contacts disposed over a substrate, the plurality of contacts being disposed as rows and columns on an orthogonal grid, each row of the plurality of contacts is spaced from an neighboring row of the plurality of contacts by a first distance, and each column of the plurality of contacts is spaced from an neighboring column of the plurality of contacts by a second distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.