Test pattern for measuring semiconductor alloys using X-ray Diffraction
US8519390B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Jul 25, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A test pattern for measuring semiconductor alloys using X-ray diffraction (XRD) includes a first region to an Nth region defined on a wafer, and a plurality of test structures positioned in the first region and so forth up to in the Nth region. The test structures in the same region have sizes identical to each other and the test structures in different regions have sizes different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.