Patent · US Active

Angled implantation for deep submicron device optimization

US8519403B1 · kind B1 · utility

0Cited by

5References

8Claims

0Family size

Assignee

Altera Corporation · US

Inventors

Che Ta Hsu · San Jose, US
Christopher J. Pass · San Jose, US
Dale E. Ibbotson · Pleasanton, US
Jeffrey T. Watt · Palo Alto, US
Yanzhong Xu · Santa Clara, US

Key dates

Filing date	Feb 4, 2011
Grant date	Aug 27, 2013
Priority date	—
Expiry date	Feb 9, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0167
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.