6F2 DRAM cell

US8519462B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Yih Wang · Portland, US
• M. Clair Webb · North Logan, US
• Nick Lindert · Beaverton, US
• Swaminathan Sivakumar · Portland, US
• Kevin X. Zhang · Austin, US
• Dinesh Somasekhar · Hillsboro, US

Key dates

• Filing date: Jun 27, 2011
• Grant date: Aug 27, 2013
• Expiry date: Jan 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.