Schottky barrier diode, a method of forming the diode and a design structure for the diode
US8519478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Sep 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are embodiments of a Schottky barrier diode. This diode can be formed in a semiconductor substrate having a doped region with a first conductivity type. A trench isolation structure can laterally surround a section of the doped region at the top surface of the substrate. A semiconductor layer can be positioned on the top surface of the substrate. This semiconductor layer can have a Schottky barrier portion over the defined section of the doped region and a guardring portion over the trench isolation structure laterally surrounding the Schottky barrier portion. The Schottky barrier portion can have the first conductivity type and the guarding portion can have a second conductivity type different from the first conductivity type. A metal silicide layer can overlie the semiconductor layer. Also disclosed are embodiments of a method of forming this Schottky barrier diode and of a design structure for the Schottky barrier diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.