Mark E. Stidham
6Patents
3h-index
10Co-inventors
43Inventor score
Filing activity: Jul 21, 2010 → Mar 31, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8421181B2 | Schottky barrier diode with perimeter capacitance well junction | Electricity | 6 | Active |
| US8519478B2 | Schottky barrier diode, a method of forming the diode and a design structure for the diode | Electricity | 4 | Active |
| US8735986B2 | Forming structures on resistive substrates | Electricity | 3 | Active |
| US8518782B2 | Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure | Electricity | 3 | Active |
| US8912597B2 | Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure | Electricity | 0 | Active |
| US9257324B2 | Forming structures on resistive substrates | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.