Patent · US Active

Semiconductor device including cladded base plate

US8519532B2 · kind B2 · utility

7Cited by

1References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andreas Lenniger · Erwitte, DE
Andre Uhlemann · Dortmund, DE
Olaf Hohlfeld · Warstein, DE

Key dates

Filing date	Sep 12, 2011
Grant date	Aug 27, 2013
Priority date	—
Expiry date	Sep 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19107
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.