Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same
US8519540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2009 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Dec 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.