Semiconductor device having plural conductive layers disposed within dielectric layer
US8519541B2 · kind B2 · utility
0Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Aug 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier layer is formed over the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.