Method of forming a deposited material by utilizing a multi-step deposition/etch/deposition (D/E/D) process
US8520194B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Oct 9, 2008 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.