Scatterometry method and measurement system for lithography
US8520212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2009 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Scatterometry method and apparatus are useful in a lithographic apparatus and device manufacturing. A back focal plane diffraction intensity image of a measurement projection system configured to project a radiation beam onto a target portion of a substrate is measured. A beam of radiation having a first wavelength is directed to the substrate. A diffraction image of a zeroth diffraction order and higher order diffraction from a diffraction structure in the substrate is provided. A first layer (4) of the diffractionstructure provides a diffraction image having only a zeroth diffraction order. A second layer (5) has a periodic structure (6a, 6b) configured such that a lowest spatial frequency of the periodic structure is lower than spatial frequencies of interest of the first structure. From the diffraction image originating from diffraction of the radiation beam in both the first and second layer a critical dimension metrology parameter is determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.