Combination CVD/ALD method and source
US8524322B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.