Method to connect a magnetic device to a CMOS transistor
US8524511B1 · kind B1 · utility
6Cited by
6References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A CMOS device is provided in a substrate. A magnetic tunnel junction (MTJ) is provided over the CMOS device and connected to the CMOS device by a metal ring contact wherein a dielectric or other filling material forms the center of the metal ring contact and wherein a bottom of the metal ring contact underlying said filling material is metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.