Semiconductor device and method of forming protective coating material over semiconductor wafer to reduce lamination tape residue
US8524537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Oct 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.