Plasma-activated deposition of conformal films
US8524612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Jan 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.