eDRAM having dynamic retention and performance tradeoff

US8525245B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Karl R. Erickson · Rochester, US
• Phil C. Paone · Rochester, US
• David P. Paulsen · Dodge Center, US
• John E. Sheets, II · Zumbrota, US
• Gregory J. Uhlmann · Rochester, US
• Kelly L. Williams · Rochester, US

Key dates

• Filing date: Apr 21, 2011
• Grant date: Sep 3, 2013
• Expiry date: Jan 3, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor chip has an embedded dynamic random access memory (eDRAM) in an independently voltage controlled silicon region that is a circuit element useful for controlling capacitor values of eDRAM deep trench capacitors and threshold voltages of field effect transistors overlying the independently voltage controlled silicon region. Retention time and performance of the eDRAM is controlled by applying a voltage to the independently voltage controlled silicon region.