Patent · US Active

Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization

US8525289B2 · kind B2 · utility

2Cited by

2References

7Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Richard J. Carter · Los Altos, US
Martin Trentzsch · Dresden, DE
Sven Beyer · Dresden, DE
Rohit Pal · Fishkill, US

Key dates

Filing date	Apr 12, 2012
Grant date	Sep 3, 2013
Priority date	—
Expiry date	Apr 12, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.