Patent · US Active

Semiconductor package and method of fabricating the same

US8525336B2 · kind B2 · utility

1Cited by
4References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 12, 2012
Grant dateSep 3, 2013
Priority date
Expiry dateJan 12, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/16238
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This disclosure provides a semiconductor package and a method of fabricating the same. The semiconductor package includes an insulating layer; a plurality of traces and connection pads disposed in the insulating layer and protruded from the insulating layer; a plurality of bumps formed on the plurality of traces; a semiconductor chip disposed on the bumps; and an encapsulant formed on the insulating layer to encapsulate the semiconductor chip, the plurality of bumps, traces and connection pads. When the encapsulant is formed, voids can be prevented from being generated in the traces and the connection pads and thus the yield of process is significantly increased.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.