Compositions for CMP of semiconductor materials

US8529680B2 · kind B2 · utility

Assignee

• Cabot Microelectronics Corporation · US

Inventors

• Francesco De Rege Thesauro · Naperville, US
• Steven Grumbine · Aurora, US
• Phillip W. Carter · Naperville, US
• Shoutian Li · Naperville, US
• Jian Zhang · Aurora, US
• David Schroeder · Aurora, US
• Ming-Shih Tsai · Hsinchu, TW

Key dates

• Filing date: Aug 11, 2010
• Grant date: Sep 10, 2013
• Expiry date: Nov 5, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.