System and method for critical dimension reduction and pitch reduction
US8529728B2 · kind B2 · utility
1Cited by
0References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A method of forming a feature is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.