Plasma processing chamber component having adaptive thermal conductor
US8529729B2 · kind B2 · utility
6Cited by
24References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Sep 1, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polymer can be used to maintain the temperature of the component at a high or low temperature during multi-step plasma etching processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.