Method of forming a bi-directional transistor with by-pass path
US8530284B2 · kind B2 · utility
5Cited by
10References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 13, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Apr 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.