Nitride shallow trench isolation (STI) structures and methods for forming the same
US8530327B2 · kind B2 · utility
3Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Oct 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures provide for at least one nitride deposition step followed by a further nitride deposition step to re-fill divots that occur along the upper portions of the trench sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.