Ganesh Yerubandi
3Patents
1h-index
4Co-inventors
33Inventor score
Filing activity: Aug 31, 2011 → Sep 8, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8530327B2 | Nitride shallow trench isolation (STI) structures and methods for forming the same | Electricity | 3 | Active |
| US9035418B2 | Nitride shallow trench isolation (STI) structures | Electricity | 0 | Active |
| US9831087B2 | Split gate embedded flash memory and method for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.