Mixed orientation semiconductor device and method

US8530355B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jiang Yan · Beijing, CN
• Danny Pak-Chum Shum · Poughkeepsie, US
• Armin Tilke · Beacon, US

Key dates

• Filing date: Dec 23, 2005
• Grant date: Sep 10, 2013
• Expiry date: Nov 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D87/00

Abstract

A method of making a semiconductor device begins with a semiconductor wafer that includes a first semiconductor layer overlying a second semiconductor layer. A first trench is etched in the semiconductor wafer. The first trench is filled with insulating material. A second trench is etched within the first trench and through the insulating material, such that insulating material remains along sidewalls of the first trench. The second trench exposes a portion of the second insulating layer. A semiconductor layer can then be grown within the second trench using the second semiconductor layer as a seed layer.