Complementary bipolar inverter

US8531001B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jin Cai · Somers, US
• Robert H. Dennard · Croton-on-Hudson, US
• Wilfried E. Haensch · Somers, US
• Tak H. Ning · Yorktown Heights, US

Key dates

• Filing date: Jun 12, 2011
• Grant date: Sep 10, 2013
• Expiry date: Nov 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01

Abstract

An example embodiment is a complementary transistor inverter circuit. The circuit includes a semiconductor-on-insulator (SOI) substrate, a lateral PNP bipolar transistor fabricated on the SOI substrate, and a lateral NPN bipolar transistor fabricated on the SOI substrate. The lateral PNP bipolar transistor includes a PNP base, a PNP emitter, and a PNP collector. The lateral NPN bipolar transistor includes a NPN base, a NPN emitter, and a NPN collector. The PNP base, the PNP emitter, the PNP collector, the NPN base, the NPN emitter, and the NPN collector abut the buried insulator of the SOI substrate.