Method for producing vias in fan-out wafers using dry film and conductive paste, and a corresponding semiconductor package
US8535980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T408/566
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing semiconductor packages is provided, that includes drilling blind apertures in a reconstituted wafer, adhering a dry film resist on the wafer over the apertures, and patterning the film to expose a space around each of the apertures. The apertures and spaces are then filled with conductive paste by wiping a quantity of the paste across a surface of the film so that paste is forced into the spaces and apertures. The spaces around the apertures define contact pads whose thickness is constrained by the thickness of the film, preferably to about 10 μm or less. To prevent paste from trapping air pockets in the apertures, the wiping process can be performed in a chamber from which much or all of the air has been evacuated. After curing the paste, the wafer is thinned from the back to expose the cured paste in the apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.