Manufacturing method for metal gate using ion implantation
US8536038B2 · kind B2 · utility
9Cited by
24References
35Claims
0Family size
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Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.