Method of forming conductive pattern
US8536056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming conductive pattern is provided. A seeding layer is formed on an underlayer. By using an energy ray, an irradiation treatment is performed on a portion of a surface of the seeding layer. The seeding layer thus includes a plurality of irradiated regions and a plurality of unirradiated regions. A conversion treatment is performed on the irradiated regions of the seeding layer. A selective growth process is performed, so as to form a conductive pattern on each unirradiated region of the seeding layer. The irradiated regions of the seeding layer are removed, so that the conductive patterns are insulated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.