Atomic layer deposition of photoresist materials and hard mask precursors
US8536068B2 · kind B2 · utility
346Cited by
8References
34Claims
0Family size
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Key dates
| Filing date | Oct 6, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.