Stable power devices on low-angle off-cut silicon carbide crystals
US8536582B2 · kind B2 · utility
3Cited by
6References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.