Semiconductor structure and fabrication method thereof
US8536635B1 · kind B1 · utility
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2References
11Claims
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Key dates
| Filing date | May 11, 2012 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | May 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
A semiconductor structure includes a semiconductor substrate having thereon a plurality of deep trenches and a plurality of pillar structures between the deep trenches, wherein each of the plurality of pillar structures comprises an upper portion and a lower portion. A doping region is formed in the lower portion. A diffusion barrier layer is disposed on a sidewall of the lower portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.