Feng Chen
25Patents
10h-index
48Co-inventors
75Inventor score
Filing activity: Oct 8, 1999 → Jun 18, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6376376B1 | Method to prevent CU dishing during damascene formation | Electricity | 43 | Expired |
| US6284644A | IMD scheme by post-plasma treatment of FSG and TEOS oxide capping layer | Electricity | 27 | Expired |
| US6204137A | Method to form transistors and local interconnects using a silicon nitride dummy gate technique | Electricity | 24 | Expired |
| US6306723A | Method to form shallow trench isolations without a chemical mechanical polish | Electricity | 24 | Expired |
| US6281082A | Method to form MOS transistors with a common shallow trench isolation and interlevel dielectric gap fill | Electricity | 23 | Expired |
| US6103569A | Method for planarizing local interconnects | Electricity | 12 | Expired |
| US6274485A | Method to reduce dishing in metal chemical-mechanical polishing | Electricity | 11 | Expired |
| US6664190B2 | Pre STI-CMP planarization scheme | Electricity | 11 | Expired |
| US7446039B2 | Integrated circuit system with dummy region | Emerging Cross-Sectional Technologies | 10 | Active |
| US6451687B1 | Intermetal dielectric layer for integrated circuits | Electricity | 10 | Expired |
| US6613649B2 | Method for buffer STI scheme with a hard mask layer as an oxidation barrier | Electricity | 8 | Expired |
| US6376378B1 | Polishing apparatus and method for forming an integrated circuit | Electricity | 7 | Expired |
| US6443809B1 | Polishing apparatus and method for forming an integrated circuit | Performing Operations; Transporting | 3 | Expired |
| US6613648B1 | Shallow trench isolation using TEOS cap and polysilicon pullback | Electricity | 2 | Expired |
| US9956656B2 | Electronic cigarette atomizer oiling and labeling device | Emerging Cross-Sectional Technologies | 1 | Active |
| US7060573B2 | Extended poly buffer STI scheme | Electricity | 1 | Expired |
| US6528886B2 | Intermetal dielectric layer for integrated circuits | Electricity | 1 | Expired |
| US7156726B1 | Polishing apparatus and method for forming an integrated circuit | Performing Operations; Transporting | 1 | Expired |
| US6964598B1 | Polishing apparatus and method for forming an integrated circuit | Electricity | 1 | Expired |
| US12313183B1 | Controller for electromagnetic valve, water treatment device and gas cooker | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US12369635B2 | Vaporizer and ceramic vaporization core thereof and method for fabricating ceramic vaporization core | Electricity | 0 | Active |
| US12077459B2 | Device and method for mud solidification based on electro-osmosis well points cooperating with well-points dewatering | Fixed Constructions | 0 | Active |
| US12122724B2 | Composite ceramic member and method for preparation thereof, vaporization assembly, and electronic cigarette | Chemistry; Metallurgy | 0 | Active |
| US7741719B2 | Integrated circuit system with dummy region | Emerging Cross-Sectional Technologies | 0 | Active |
| US8536635B1 | Semiconductor structure and fabrication method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.