Trench MOSFET and method for fabricating same
US8536645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.