Magnetic shift register memory device
US8537588B2 · kind B2 · utility
2Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.