Patent · US Active

Memory voltage regulator with leakage current voltage control

US8537625B2 · kind B2 · utility

4Cited by

58References

21Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Ravindraraj Ramaraju · Round Rock, US
Shayan Zhang · Cedar Park, US
Kenneth R. Burch · Austin, US
Charles E. Seaberg · Austin, US
Andrew C. Russell · Austin, US

Key dates

Filing date	Mar 10, 2011
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Nov 4, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/412
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A voltage regulator for a memory that regulates a voltage provided to the memory cells based on a measured leakage current from a second set of memory cells. In one embodiment, based on the measured leakage current, the voltage to the cells is raised or lowered to control the amount of leakage current from the cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.