LED with current confinement structure and surface roughening
US8541788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2009 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Oct 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.